M. Erdtmann

Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector

Songhyun Kim, Hooman Mohseni, M. Erdtmann et al. · Applied Physics Letters · 1998 · 151 citations

Optical Materials, Engineering, Optoelectronic Devices +21

SiGe-free strained Si on insulator by wafer bonding and layer transfer

T. A. Langdo, M. T. Currie, Anthony Lochtefeld et al. · Applied Physics Letters · 2003 · 90 citations

Engineering, Insulator Structure, Integrated Circuits +17

Strained Si on insulator technology: from materials to devices

T. A. Langdo, M. T. Currie, Zhiyuan Cheng et al. · Solid-State Electronics · 2004 · 55 citations

Electrical Engineering, Engineering, Applied Physics +4

The Crystallographic Properties of Strained Silicon Measured by X-Ray Diffraction

M. Erdtmann, T. A. Langdo · Journal of Materials Science Materials in Electronics · 2006 · 34 citations

Materials Science, Engineering, Dislocation Interaction +7

Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor deposition

S. Kim, M. Erdtmann, Donghai Wu et al. · Applied Physics Letters · 1996 · 29 citations

Engineering, Optoelectronic Devices, Chemistry +17