A. Resende

Calculations of Electrical Levels of Deep Centers: Application to Au-H and Ag-H Defects in Silicon

A. Resende, R. Jones, S. Öberg et al. · Physical Review Letters · 1999 · 107 citations

Engineering, Deep Centers, Specific H Defects +20

The Interaction of Hydrogen with Deep Level Defects in Silicon

R. Jones, B.J. Coomer, Jonathan P. Goss et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1999 · 59 citations

Self-interstitial–hydrogen Complexes, Engineering, Di-hydrogenated Split Interstitials +19

Tin-vacancy acceptor levels in electron-irradiated n-type silicon

A. Nylandsted Larsen, Jean-Jacques Goubet, P. Mejlholm et al. · Physical review. B, Condensed matter · 2000 · 44 citations · Full text

Semiconductors, Semiconductor Technology, Transition Metal Chalcogenides +13

The divacancy in silicon and diamond

B.J. Coomer, A. Resende, Jonathan P. Goss et al. · Physica B Condensed Matter · 1999 · 28 citations

Materials Science, Diamond-like Carbon, Engineering +3

Theory of Nickel and Nickel-Hydrogen Complexes in Silicon

R. Jones, S. Öberg, J. P. Goss et al. · Physical Review Letters · 1995 · 23 citations · Full text

Charge Excitations, Engineering, Chemistry +23