S. Öberg

The Twelve-Line 1.682 eV Luminescence Center in Diamond and the Vacancy-Silicon Complex

J. P. Goss, R. Jones, Steffen Breuer et al. · Physical Review Letters · 1996 · 296 citations

Engineering, Luminescence Property, Ii-vi Semiconductor +18

Calculations of Electrical Levels of Deep Centers: Application to Au-H and Ag-H Defects in Silicon

A. Resende, R. Jones, S. Öberg et al. · Physical Review Letters · 1999 · 107 citations

Engineering, Deep Centers, Specific H Defects +20

Dislocation Related Photoluminescence in Silicon

A. T. Blumenau, R. Jones, S. Öberg et al. · Physical Review Letters · 2001 · 59 citations

Materials Science, Donor Levels, Ii-vi Semiconductor +14

Dynamic properties of interstitial carbon and carbon-carbon pair defects in silicon

P. Leary, R. Jones, S. Öberg et al. · Physical review. B, Condensed matter · 1997 · 55 citations

Engineering, Vibrational Modes, Degenerate Vibrational Modes +18

Substitutional carbon in germanium

Lone Hoffmann, Janni Bach, B. Bech Nielsen et al. · Physical review. B, Condensed matter · 1997 · 38 citations

Microwave Spectroscopy, Engineering, Physics +13