J. P. Goss

Theory of Li in ZnO: A limitation for Li-based<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type doping

M. G. Wardle, J. P. Goss, P. R. Briddon · Physical Review B · 2005 · 342 citations

Semiconductors, Materials Science, Math Xmlns +13

Interstitial aggregates and a new model for the I1/W optical centre in silicon

B.J. Coomer, J. P. Goss, R. Jones et al. · Physica B Condensed Matter · 1999 · 76 citations

Materials Science, Photonics, Ii-vi Semiconductor +14

Identification of the tetra-interstitial in silicon

B.J. Coomer, J. P. Goss, R. Jones et al. · Journal of Physics Condensed Matter · 2000 · 65 citations

Materials Science, Ii-vi Semiconductor, Optical Materials +13

First-Principles Calculations of Pseudolocal Vibrational Modes: The Case of Cu and Cu Pairs in Si

S. K. Estreicher, Damien West, J. P. Goss et al. · Physical Review Letters · 2003 · 61 citations

First-principles Calculations, Engineering, Acoustic Metamaterial +18

Radiation-hard semiconductor detectors for SuperLHC

M. Bruzzi, J. Adey, A. Al-Ajili et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2005 · 59 citations · Full text

Engineering, Radiation Detection, Physics +5