T. R. Lepkowski

Characterization of high-purity Si-doped molecular beam epitaxial GaAs

B. J. Skromme, Sukanta Bose, B. Lee et al. · Journal of Applied Physics · 1985 · 97 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9

Depletion corrections in variable temperature Hall measurements

T. R. Lepkowski, R. Y. Dejule, N. C. Tien et al. · Journal of Applied Physics · 1987 · 28 citations

Wide-bandgap Semiconductor, Engineering, Measurement +21

Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz

C.L. Lau, M. Feng, T. R. Lepkowski et al. · IEEE Electron Device Letters · 1989 · 22 citations

Semiconductor Technology, Electrical Engineering, Ion Implantation +12

High-performance millimeter-wave ion-implanted GaAs MESFETs

G.W. Wang, M. Feng, C.L. Lau et al. · IEEE Electron Device Letters · 1989 · 18 citations

Electrical Engineering, Engineering, High-frequency Device +8

Neutron transmutation doping of high purity GaAs

T. S. Low, Man-Hoe Kim, B. Lee et al. · Journal of Electronic Materials · 1985 · 18 citations

Semiconductors, Wide-bandgap Semiconductor, Engineering +2