V. Aubry-Fortuna

Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers

D. Defives, O. Noblanc, C. Dua et al. · IEEE Transactions on Electron Devices · 1999 · 141 citations

Electrical Engineering, Low Voltage Level, Engineering +11

On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation

Damien Querlioz, Jérôme Saint-Martin, Karim Huet et al. · IEEE Transactions on Electron Devices · 2007 · 86 citations · Full text

Engineering, Nanocomputing, Semiconductor Device +20

Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct Ionization

M. Raine, Marc Gaillardin, Jean-Etienne Sauvestre et al. · IEEE Transactions on Nuclear Science · 2010 · 50 citations

Electrical Engineering, Transistor Electric Response, Transistor Sensitive Volume +13

Electron effective mobility in strained-Si/Si1−xGex MOS devices using Monte Carlo simulation

V. Aubry-Fortuna, Philippe Dollfus, S. Galdin‐Retailleau · Solid-State Electronics · 2005 · 45 citations · Full text

Electrical Engineering, Strained-si/si1−xgex Mos Devices, Engineering +9

UHV-CVD heteroepitaxial growth of Si1−xGex alloys on Si(100) using silane and germane

Le Thanh Vinh, V. Aubry-Fortuna, Yulin Zheng et al. · Thin Solid Films · 1997 · 20 citations

Materials Engineering, Materials Science, Engineering +5