K. T. Woodhouse - Concepedia

Author

K. T. Woodhouse

Imperial College London

Also Known As

K Woodhouse, K. T. Woodhouse, K. Woodhouse, K.T. Woodhouse

Publications

219

Citations

H-Index

Concepts

All Affiliations

Imperial College London Middlesex University Materials Technology (United Kingdom)

About

K. T. Woodhouse is an author at Imperial College London specializing in applied physics, engineering, and natural sciences.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	188
2	Applied Physics	7	7	190
3	Natural Sciences	4	4	127
4	Chemistry	3	3	60
5	Computer Engineering	1	1	29

K. T. Woodhouse

Publications

219

Citations

H-Index

Page 1

	Year	Citations
LVM spectroscopy of carbon and carbon-hydrogen pairs in GaAs grown by MOMBE K. T. Woodhouse, R.C. Newman, T. J. de Lyon, Semiconductor Science and Technology Wide-bandgap SemiconductorEngineeringIi-vi SemiconductorElectron SpectroscopyGaas Films	1991	54
The lattice sites of carbon and hydrogen incorporated in GaAs grown by MOVPE revealed by infrared spectroscopy K. T. Woodhouse, R. C. Newman, R. C. Nicklin, Journal of Crystal Growth Ii-vi SemiconductorPhysicsNatural SciencesInfrared SpectroscopyApplied Physics	1992	31
Implementation of a computer-controlled MOVPE system to grow epitaxial CMT M. J. Bevan, K. T. Woodhouse Journal of Crystal Growth Electrical EngineeringEngineeringElectronic EngineeringComputer EngineeringSemiconductor Device Fabrication	1984	29
Epitaxial growth of II–VI compounds on sapphire substrates J. Will Thompson, K. T. Woodhouse, C. Dineen Journal of Crystal Growth Materials EngineeringEngineeringApplied PhysicsMolecular Beam EpitaxyEpitaxial Growth	1986	27
Metal–organic chemical vapor deposition of mercury cadmium telluride epitaxial films M. J. Hyliands, J. Will Thompson, M. J. Bevan, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringThin Film Process TechnologyChemistryChemical DepositionSemiconductors	1986	26
Carbon acceptors passivated with hydrogen and the search for carbon donors in highly doped GaAs:C M. J. Ashwin, BR Davidson, K. T. Woodhouse, Semiconductor Science and Technology Wide-bandgap SemiconductorEngineeringChemistrySemiconductorsIi-vi Semiconductor	1993	24
Raman spectroscopic assessment of carbon-hydrogen pairs in carbon-doped GaAs layers J. Wagner, Matthias Maier, Th. Lauterbach, Applied Physics Letters SemiconductorsCarbon-hydrogen PairsEngineeringPhysicsNatural Sciences	1992	18
Influence of layer thickness on the quality of mercury cadmium telluride epilayers grown by the interdiffused multilayer process P. M. Raccah, Z. Zhang, J. W. Garland, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceMaterials EngineeringLayer ThicknessIi-vi SemiconductorEngineering	1986	10

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