K. T. Woodhouse

LVM spectroscopy of carbon and carbon-hydrogen pairs in GaAs grown by MOMBE

K. T. Woodhouse, R.C. Newman, T. J. de Lyon et al. · Semiconductor Science and Technology · 1991 · 54 citations

Wide-bandgap Semiconductor, Engineering, Ii-vi Semiconductor +17

The lattice sites of carbon and hydrogen incorporated in GaAs grown by MOVPE revealed by infrared spectroscopy

K. T. Woodhouse, R. C. Newman, R. C. Nicklin et al. · Journal of Crystal Growth · 1992 · 31 citations

Ii-vi Semiconductor, Physics, Natural Sciences +8

Implementation of a computer-controlled MOVPE system to grow epitaxial CMT

M. J. Bevan, K. T. Woodhouse · Journal of Crystal Growth · 1984 · 29 citations

Electrical Engineering, Engineering, Electronic Engineering +4

Epitaxial growth of II–VI compounds on sapphire substrates

J. Will Thompson, K. T. Woodhouse, C. Dineen · Journal of Crystal Growth · 1986 · 27 citations

Materials Engineering, Engineering, Applied Physics +2

Metal–organic chemical vapor deposition of mercury cadmium telluride epitaxial films

M. J. Hyliands, J. Will Thompson, M. J. Bevan et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 26 citations

Engineering, Thin Film Process Technology, Chemistry +17