Taofei Pu

Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

Xiaobo Li, Taofei Pu, Xianjie Li et al. · IEEE Transactions on Electron Devices · 2020 · 50 citations

Wide-bandgap Semiconductor, Sub Xmlns, Electrical Engineering +8

p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

Xiaobo Li, Taofei Pu, Tong Zhang et al. · IEEE Sensors Journal · 2019 · 48 citations

Wide-bandgap Semiconductor, P-nio/n-gan Heterostructure Diodes, Electrical Engineering +10

Fabrication of FTO–BiVO₄–W–WO₃ photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

Ruiling Wang, Tian Xie, Tong Zhang et al. · Journal of Materials Chemistry A · 2018 · 43 citations

Materials Science, Chemical Engineering, Optical Materials +12

Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

Xiaobo Li, Taofei Pu, Liuan Li et al. · IEEE Electron Device Letters · 2020 · 42 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes

Ying Wang, Taofei Pu, Xiaobo Li et al. · Materials Science in Semiconductor Processing · 2020 · 36 citations

Materials Engineering, Materials Science, Electrical Engineering +13