W Murray Bullis

Properties of gold in silicon

W Murray Bullis · Solid-State Electronics · 1966 · 313 citations

Materials Science, Engineering, Nanotechnology +5

Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption

A. Baghdadi, W Murray Bullis, M.C. Croarkin et al. · Journal of The Electrochemical Society · 2006 · 150 citations

Ir Round Robin, Chemical Engineering, Infrared Absorption +15

Semiconductor Characterization: Present Status and Future Needs

W Murray Bullis, David G. Seiler, Alain C. Diebold · 1996 · 87 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +6

Temperature coefficient of resistivity of silicon and germanium near room temperature

W Murray Bullis, F.H. Brewer, C.D. Kolstad et al. · Solid-State Electronics · 1968 · 78 citations

Room Temperature, Electrical Engineering, Engineering +9

Interpretation of Carrier Recombination Lifetime and Diffusion Length Measurements in Silicon

W Murray Bullis, Howard R. Huff · Journal of The Electrochemical Society · 1996 · 53 citations

Engineering, Integrated Circuits, Carrier Lifetime +20