G. Servalli

A 45nm generation Phase Change Memory technology

G. Servalli · 2009 · 186 citations

Engineering, Electrical Engineering, Materials Science +14

NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads

Nirmal Ramaswamy, Alessandro Calderoni, J. Zahurak et al. · 2023 · 110 citations

Engineering, Computer Engineering, Electrical Engineering +17

Simulation of the Amorphous-Silicon Properties and Their Dependence on Sample Preparation

G. Servalli, Luciano Colombo · Europhysics Letters (EPL) · 1993 · 64 citations

Natural Sciences, Materials Science, Physics +17

Optimization metrics for Phase Change Memory (PCM) cell architectures

Mattia Boniardi, Andrea Redaelli, C. Cupeta et al. · 2014 · 59 citations

Engineering, Computer Engineering, Materials Engineering +13

A 65nm NOR flash technology with 0.042μm/sup 2/ cell size for high performance multilevel application

G. Servalli, D. Brazzelli, E. Camerlenghi et al. · 2006 · 23 citations

Engineering, Computer Engineering, Electrical Engineering +10