Shengjun Qin

Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory

Shengjun Qin, Zhan Liu, Zhang Guo et al. · Physical Chemistry Chemical Physics · 2015 · 38 citations

Natural Sciences, Materials Science, Physics +17

Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects

Fei Huang, Balreen Saini, Lei Wan et al. · ACS Nano · 2024 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +16

Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part II: Design Guidelines for Device, Array, and Architecture

Zizhen Jiang, Shengjun Qin, Haitong Li et al. · IEEE Transactions on Electron Devices · 2019 · 29 citations

Engineering, Computer Engineering, Electrical Engineering +17

Effect of Top-Gate Dielectric Deposition on the Performance of Indium Tin Oxide Transistors

Sumaiya Wahid, Alwin Daus, Jimin Kwon et al. · IEEE Electron Device Letters · 2023 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Scaling the CBRAM Switching Layer Diameter to 30 nm Improves Cycling Endurance

Shosuke Fujii, Jean Anne C. Incorvia, Fang Yuan et al. · IEEE Electron Device Letters · 2017 · 26 citations

Engineering, Electrical Engineering, Materials Science +17