A Blondeel

Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

C. Claeys, E. Simoen, V. B. Neimash et al. · Journal of The Electrochemical Society · 2001 · 35 citations

Deep levels in high-energy proton-irradiated tin-doped <i>n</i>-type Czochralski silicon

Eddy Simoen, Cor Claeys, V. B. Neimash et al. · Applied Physics Letters · 2000 · 25 citations

Semiconductors, Semiconductor Technology, Tin Doping +12

New target materials for innovative applications on glass

Steven Matthews, Veerle De Bosscher, A Blondeel et al. · Vacuum · 2008 · 21 citations

Materials Science, New Target Materials, Glass-ceramic +6

Optical deep level transient spectroscopy of minority carrier traps in n-type high-purity germanium

A Blondeel, P. Clauws, Dirk Vyncke · Journal of Applied Physics · 1997 · 21 citations · Full text

Wide-bandgap Semiconductor, Engineering, Band Gap +18

Photoinduced current transient spectroscopy of deep defects in <i>n</i>-type ultrapure germanium

A Blondeel, P. Clauws · Journal of Applied Physics · 1999 · 14 citations

Transient Grating, Engineering, Deep Defects +17