Concepedia

V. B. Neimash

VB

14

Publications

248

Citations

11

H-Index

2000

Active since

Affiliations

Institute of Physics(Current)

National Academy of Sciences of Ukraine

IMEC

Taras Shevchenko National University of Kyiv

V.E. Lashkaryov Institute of Semiconductor Physics

V. B. Neimash is an author at Institute of Physics specializing in applied physics, engineering, and materials science.

ORCID

Top concepts

Publications per year

2000–2018

14

Publications

14

Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

C. Claeys, E. Simoen, V. B. Neimash et al. · Journal of The Electrochemical Society · 2001 · 35 citations

Tin induced a-Si crystallization in thin films of Si-Sn alloys

V. B. Neimash, V. N. Poroshin, P. E. Shepeliavyi et al. · Journal of Applied Physics · 2013 · 30 citations

, , +15

Deep levels in high-energy proton-irradiated tin-doped <i>n</i>-type Czochralski silicon

Eddy Simoen, Cor Claeys, V. B. Neimash et al. · Applied Physics Letters · 2000 · 25 citations

, , +12

The effect of Sn impurity on the optical and structural properties of thin silicon films

Vasyl Voitovych, V. B. Neimash, N. N. Kras’ko et al. · Semiconductors · 2011 · 22 citations

Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities

Marie‐Laure David, Eddy Simoen, C. Claeys et al. · Journal of Physics Condensed Matter · 2005 · 18 citations

, , +15

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