Brian Markman

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Joon Sue Lee, Sukgeun Choi, Mihir Pendharkar et al. · Physical Review Materials · 2019 · 68 citations · Full text

New Strategy for the Growth of Complex Heterostructures Based on Different 2D Materials

Mattia Cattelan, Brian Markman, Giacomo Lucchini et al. · Chemistry of Materials · 2015 · 37 citations

${L}_{{g}} = {30}$ nm InAs Channel MOSFETs Exhibiting ${f}_{\textit {max}} ={410}$ GHz and ${f}_{{t}} = {357}$ GHz

Jun Wu, Yihao Fang, Brian Markman et al. · IEEE Electron Device Letters · 2018 · 25 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Silicon RibbonFET CMOS at 6nm Gate Length

Abhishek Agrawal, Wriddhi Chakraborty, Wei Li et al. · 2024 · 22 citations

100-340GHz Systems: Transistors and Applications

M.J.W. Rodwell, Yihao Fang, Johann C. Rode et al. · 2018 · 19 citations

100-340Ghz Systems, Wireless Communications, Electrical Engineering +12