W. Li

Concentration of interstitial and substitutional nitrogen in GaNxAs1−x

T. Ahlgren, E. Vainonen-Ahlgren, J. Likonen et al. · Applied Physics Letters · 2002 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +13

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

E.-M. Pavelescu, Changsi Peng, T. Jouhti et al. · Applied Physics Letters · 2002 · 71 citations

Engineering, Materials Engineering, Materials Science +17

Identification of vacancy charge states in diffusion of arsenic in germanium

E. Vainonen-Ahlgren, T. Ahlgren, J. Likonen et al. · Applied Physics Letters · 2000 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Growth of device-quality GaAs layer directly on (001) Ge substrates by both solid-source and gas-source MBE

W. Li, S. Laaksonen, Jouko Haapamaa et al. · Journal of Crystal Growth · 2001 · 28 citations

Engineering, Materials Engineering, Materials Science +11

Towards high-performance nitride lasers at 1.3 μm and beyond

M. Pessa, Changsi Peng, T. Jouhti et al. · IEE Proceedings - Optoelectronics · 2003 · 27 citations

Engineering, Electrical Engineering, Materials Science +17