E.-M. Pavelescu

Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

Wei Li, Tomi Jouhti, Changsi Peng et al. · Applied Physics Letters · 2001 · 89 citations

Optical Materials, Engineering, Laser Science +17

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

E.-M. Pavelescu, Changsi Peng, T. Jouhti et al. · Applied Physics Letters · 2002 · 71 citations

Materials Science, Semiconductors, Photonics +15

1.32-μm GaInNAs-GaAs laser with a low threshold current density

Changsi Peng, T. Jouhti, P. Laukkanen et al. · IEEE Photonics Technology Letters · 2002 · 65 citations

Photonics, Engineering, Laser Science +13

Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)

C. Gilfert, E.-M. Pavelescu, Johann Peter Reithmaier · Applied Physics Letters · 2010 · 58 citations · Full text

Ii-vi Semiconductor, Quantum Dashes, Quantum Dot-like Inas +15

Growth-temperature-dependent (self-)annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells

E.-M. Pavelescu, T. Jouhti, M. Dumitrescu et al. · Applied Physics Letters · 2003 · 51 citations

Annealing-induced Blueshift, Engineering, Optoelectronic Devices +17