Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Abstract

We present a 1.3-μm GaInNAs/GaAs quantum-well heterostructure, which consists of a strain-mediating GaInNAs layer grown between a compressive-strained quantum well and a tensile-strained GaNAs layer. Compared to a similar sample with no strain-mediating layer, this heterostructure exhibits improved material properties and remarkable redshift of emission with enhanced light intensity. The observations are based on photoluminescence spectra and x-ray diffraction data measured for the active region of the samples.