Sayaka Ishizuka

Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al_0.6Ga_0.4N/AlN/sapphire

Kosuke Sato, Shinji Yasue, Kazuki Yamada et al. · Applied Physics Express · 2020 · 100 citations

Aluminium Nitride, Room Temperature, Optical Materials +14

AlGaN-based UV-B laser diode with a high optical confinement factor

Shunya Tanaka, Yuya Ogino, Kazuki Yamada et al. · Applied Physics Letters · 2021 · 47 citations

Aluminium Nitride, Photonics, Electrical Engineering +13

Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping

Tomoya Omori, Sayaka Ishizuka, Shunya Tanaka et al. · Applied Physics Express · 2020 · 45 citations

Wide-bandgap Semiconductor, Low Internal Loss, Optical Materials +10

Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure

Shunya Tanaka, Yuya Ogino, Kazuki Yamada et al. · Applied Physics Express · 2021 · 19 citations

Short Wavelength Optic, Optical Materials, Engineering +16

Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length

Kosuke Sato, Tomoya Omori, Kazuki Yamada et al. · Japanese Journal of Applied Physics · 2021 · 14 citations