Tomoya Omori

Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al_0.6Ga_0.4N/AlN/sapphire

Kosuke Sato, Shinji Yasue, Kazuki Yamada et al. · Applied Physics Express · 2020 · 100 citations

Aluminium Nitride, Room Temperature, Optical Materials +14

AlGaN-based UV-B laser diode with a high optical confinement factor

Shunya Tanaka, Yuya Ogino, Kazuki Yamada et al. · Applied Physics Letters · 2021 · 47 citations

Aluminium Nitride, Photonics, Electrical Engineering +13

Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping

Tomoya Omori, Sayaka Ishizuka, Shunya Tanaka et al. · Applied Physics Express · 2020 · 45 citations

Wide-bandgap Semiconductor, Low Internal Loss, Optical Materials +10

Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers

Shunya Tanaka, Yuta Kawase, Shohei Teramura et al. · Applied Physics Express · 2020 · 32 citations

Scattering Model, Wide-bandgap Semiconductor, Optical Materials +13

AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate

Shunya Tanaka, Shohei Teramura, Moe Shimokawa et al. · Applied Physics Express · 2021 · 26 citations

Optical Materials, Engineering, Laser Science +18