Shinji Yasue

Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al_0.6Ga_0.4N/AlN/sapphire

Kosuke Sato, Shinji Yasue, Kazuki Yamada et al. · Applied Physics Express · 2020 · 100 citations

Aluminium Nitride, Room Temperature, Optical Materials +14

Ultraviolet-B band lasers fabricated on highly relaxed thick Al_0.55Ga_0.45N films grown on various types of AlN wafers

Yuta Kawase, Syunya Ikeda, Yusuke Sakuragi et al. · Japanese Journal of Applied Physics · 2019 · 45 citations · Full text

Wide-bandgap Semiconductor, Aluminium Nitride, Optical Materials +19

Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping

Tomoya Omori, Sayaka Ishizuka, Shunya Tanaka et al. · Applied Physics Express · 2020 · 45 citations

Wide-bandgap Semiconductor, Low Internal Loss, Optical Materials +10

Light confinement and high current density in UVB laser diode structure using Al composition-graded p-AlGaN cladding layer

Kosuke Sato, Shinji Yasue, Yuya Ogino et al. · Applied Physics Letters · 2019 · 43 citations

Aluminium Nitride, Photonics, Electrical Engineering +15

The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution

Shinji Yasue, Kosuke Sato, Yuta Kawase et al. · Japanese Journal of Applied Physics · 2019 · 33 citations

Aluminium Nitride, Optical Materials, Engineering +18