Satyanand Nalam

Analyzing static and dynamic write margin for nanometer SRAMs

Satyanand Nalam, Benton H. Calhoun · 2008 · 196 citations

Engineering, Computer Engineering, Electrical Engineering +15

Impact of circuit assist methods on margin and performance in 6T SRAM

R. Mann, Satyanand Nalam, Sudhanshu Khanna et al. · Solid-State Electronics · 2010 · 52 citations

Engineering, Computer Engineering, Electrical Engineering +12

17.1 A 0.6V 1.5GHz 84Mb SRAM design in 14nm FinFET CMOS technology

Eric Karl, Zheng Guo, James W. Conary et al. · 2015 · 45 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 0.6 V, 1.5 GHz 84 Mb SRAM in 14 nm FinFET CMOS Technology With Capacitive Charge-Sharing Write Assist Circuitry

Eric Karl, Zheng Guo, James W. Conary et al. · IEEE Journal of Solid-State Circuits · 2015 · 45 citations

Engineering, Computer Engineering, Electrical Engineering +17

5.6 Mb/mm $^{2}$ 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm FinFET CMOS Technology

Jaydeep P. Kulkarni, John Keane, Kyung-Hoae Koo et al. · IEEE Journal of Solid-State Circuits · 2016 · 42 citations

Engineering, Computer Engineering, Electrical Engineering +16