Oleg M. Orlov

Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films

Damir R. Islamov, V. A. Gritsenko, Timofey V. Perevalov et al. · Acta Materialia · 2018 · 108 citations · Full text

Materials Science, Spintronics, Multiferroics +10

Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films

Maxim G. Kozodaev, Andrey M. Markeev, Yu. A. Matveev et al. · Microelectronic Engineering · 2015 · 79 citations

Materials Science, Multiferroics, Engineering +5

Nature of traps responsible for the memory effect in silicon nitride

V. A. Gritsenko, Timofey V. Perevalov, Oleg M. Orlov et al. · Applied Physics Letters · 2016 · 63 citations

Engineering, Optoelectronic Devices, Chemistry +18

Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide

Damir R. Islamov, Timur M. Zalyalov, Oleg M. Orlov et al. · Applied Physics Letters · 2020 · 53 citations

Engineering, Phase Change Memory, Oxygen Vacancy +18

Technology for nanoperiodic doping of a metal oxide semiconductor field-effect transistor channel using a self-forming wave-ordered structure

V. K. Smirnov, D. S. Kibalov, Oleg M. Orlov et al. · Nanotechnology · 2003 · 51 citations

Engineering, Integrated Circuits, Semiconductor Device +16