Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

Chang-Eun Kim, Pyung Moon, Sungyeon Kim, +4

Thin Solid Films

Materials ScienceOptical MaterialsEngineeringOptical PropertiesOxide Electronics +7

Effects of Thickness Variation on Properties of ZnO Thin Films Grown by Pulsed Laser Deposition

Jae-Min Myoung, Wook-Hi Yoon, Dong-Hi Lee, +3

Japanese Journal of Applied Physics

Materials ScienceMaterials EngineeringEngineeringElectron MicroscopyFilm Thickness +10

Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells

Do Young ‍Kim, Ilgu Yun, Hyungjun Kim

Current Applied Physics

Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringOxide Electronics +9

Analysis of Bias Stress Instability in Amorphous InGaZnO Thin-Film Transistors

Edward Namkyu Cho, Jung Han Kang, Chang-Eun Kim, +2

IEEE Transactions on Device and Materials Reliability

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesElectrical Bias Stress +13

Formation of p-type ZnO film on InP substrate by phosphor doping

Kyu-Hyun Bang, Deuk-Kyu Hwang, Min‐Chul Park, +3

Applied Surface Science

Materials ScienceInp SubstrateEngineeringOxide ElectronicsPhosphor Doping +5

Annealing effect on the structural and optical properties of ZnO thin film on InP

Eun Sub Shim, Hong Seong Kang, Seong Sik Pang, +3

Materials Science and Engineering B

Materials ScienceIi-vi SemiconductorOptical MaterialsEngineeringMaterial Analysis +7

A 32-KB Standard CMOS Antifuse One-Time Programmable ROM Embedded in a 16-bit Microcontroller

Ilgu Yun, Jae Joon Kim, B.-C. So, +3

IEEE Journal of Solid-State Circuits

Hardware SecuritySystem On ChipElectrical Engineering16-Bit MicrocontrollerProgram Memory +13

Characteristics and processing effects of ZrO2 thin films grown by metal-organic molecular beam epitaxy

Myoung-Seok Kim, Young-Don Ko, Jang-Hyuk Hong, +3

Applied Surface Science

Materials ScienceEngineeringNanotechnologyOxide ElectronicsSurface Science +7

Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors

Edward Namkyu Cho, Jung Han Kang, Ilgu Yun

Microelectronics Reliability

Electrical EngineeringEngineeringChannel Thickness VariationStress-induced Leakage CurrentBias Temperature Instability +4

Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Jung Han Kang, Edward Namkyu Cho, Chang-Eun Kim, +4

Applied Physics Letters

Materials ScienceElectrical EngineeringEngineeringNanoelectronicsOxide Electronics +11