Y. Tanaka

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

Tz-yi Liu, Tian Hong Yan, R.E. Scheuerlein et al. · IEEE Journal of Solid-State Circuits · 2013 · 175 citations

Non-volatile Memory, Engineering, Vlsi Design +17

A 130.7mm<sup>2</sup> 2-layer 32Gb ReRAM memory device in 24nm technology

Tz-yi Liu, Tian Hong Yan, R.E. Scheuerlein et al. · 2013 · 116 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +13

MR Ratio Enhancement by NOL Current-Confined-Path Structures in CPP Spin Valves

Hideaki Fukuzawa, Hiromi Yuasa, S. Hashimoto et al. · IEEE Transactions on Magnetics · 2004 · 106 citations

Engineering, Magnetic Resonance, Ccp Structure +18

High performance CoPtCrO single layered perpendicular media with no recording demagnetization

S. Oikawa, Akihiko Takeo, T. Hikosaka et al. · IEEE Transactions on Magnetics · 2000 · 75 citations

Magnetism, Spintronics, Perpendicular Media +12

Phase transitions of LnSb (Ln=lanthanide) with NaCl-type structure at high pressures

J. Hayashi, Ichimin Shirotani, Y. Tanaka et al. · Solid State Communications · 2000 · 60 citations

Phase Transitions, Engineering, Physics +8