R. Hölzl

The impact of nitrogen on the defect aggregation in silicon

Wilfried von Ammon, R. Hölzl, J. Virbulis et al. · Journal of Crystal Growth · 2001 · 92 citations

Materials Engineering, Engineering, Crystalline Defects +10

Calibrated Contamination Spiking Method for Silicon Wafers in the 1010 – 1012   Atom / cm2 Range

R. Hölzl, K.‐J. RANGE, L. Fabry et al. · Journal of The Electrochemical Society · 1999 · 23 citations

Engineering, – 1012, Copper Contamination +20

Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations

R. Hölzl, Arthur Huber, L. Fabry et al. · Applied Physics A · 2001 · 19 citations

Materials Science, Electrical Engineering, Ultrathin Gate Oxides +9

SP‐100 high‐temperautre advanced radiator development

Richard D. Rovang, Maribeth E. Hunt, R. B. Dirling et al. · AIP conference proceedings · 1991 · 14 citations

Materials Science, Thin Rhenium Interlayer, Engineering +12

Gettering efficiencies for Cu and Ni as a function of size and density of oxygen precipitates in p/p- silicon epitaxial wafers

R. Hölzl, L. Fabry, K.‐J. RANGE · Applied Physics A · 2001 · 14 citations

Materials Engineering, Materials Science, Wafer Scale Processing +7