Y B Li

Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy

Y B Li, R. A. Stradling, T Knight et al. · Semiconductor Science and Technology · 1993 · 62 citations

Ii-vi Semiconductor, Electrical Engineering, Optical Materials +15

Raman scattering by plasmon-phonon modes in highly doped n-InAs grown by molecular beam epitaxy

Y B Li, Ian T. Ferguson, R. A. Stradling et al. · Semiconductor Science and Technology · 1992 · 40 citations

Materials Science, Plasmonics, Engineering +12

Raman scattering in InAs_1-xSb_xalloys grown on GaAs by molecular beam epitaxy

Y B Li, S. Dosanjh, Ian T. Ferguson et al. · Semiconductor Science and Technology · 1992 · 34 citations

Materials Science, Semiconductors, Materials Engineering +15

A magneto-photoluminescence investigation of the band offset between InAs and arsenic-rich InAs1−<i>x</i>Sb<i>x</i> alloys

P. J. P. Tang, M. J. Pullin, Y B Li et al. · Applied Physics Letters · 1996 · 17 citations

Wide-bandgap Semiconductor, Engineering, Band Offset +18

Observation of coupled LO phonon-intersubband plasmon modes in GaSb/InAs quantum wells by resonant Raman scattering

Y B Li, V.G. Tsoukala, R. A. Stradling et al. · Semiconductor Science and Technology · 1993 · 10 citations

Plasmonics, Coupled System, Photoluminescence +13