Applied Physics Letters · 1996 · 17 citations · 0 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsElectronic Band StructureQuantum Well DevicesQuantum WellsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsAlloy SemiconductorsMagnetic ConfinementPhotoluminescencePhotoluminescence In Quantum WellsQuantum Well StructuresType-ii Quantum WellsValence BandValence Band Structure
InAs/InAs0.865Sb0.135 quantum wells are characterized using magneto-photoluminescence. Band- to-band transitions are found at energies lower than the band gaps of either the InAs or the InAs0.865Sb0.135 with photoluminescence emission at wavelengths up to 4.8 μm. By modeling the quantum size shifts of the photoluminescence transitions and their energy shift in a magnetic field, the valence band offset between InAs and In(As,Sb) is deduced to be type II with electron confinement in the In(As,Sb) alloy and hole confinement in InAs.