Rajesh Katamreddy

ALD and Characterization of Aluminum Oxide Deposited on Si(100) using Tris(diethylamino) Aluminum and Water Vapor

Rajesh Katamreddy, Ronald Inman, Gregory Jursich et al. · Journal of The Electrochemical Society · 2006 · 62 citations · Full text

Materials Science, Aluminium Nitride, Chemical Engineering +15

Ti Source Precursors for Atomic Layer Deposition of TiO2, STO and BST

Rajesh Katamreddy, Vincent Omarjee, Benjamin Feist et al. · ECS Transactions · 2008 · 39 citations

Engineering, Inorganic Photochemistry, Oxidation Resistance +20

Atomic Layer Deposited Ultrathin HfO[sub 2] and Al[sub 2]O[sub 3] Films as Diffusion Barriers in Copper Interconnects

Prodyut Majumder, Rajesh Katamreddy, Christos G. Takoudis · Electrochemical and Solid-State Letters · 2007 · 35 citations

Aluminium Nitride, Engineering, Atomic Layer +16

Post deposition annealing of aluminum oxide deposited by atomic layer deposition using tris(diethylamino)aluminum and water vapor on Si(100)

Rajesh Katamreddy, Ronald Inman, Gregory Jursich et al. · Thin Solid Films · 2007 · 34 citations

Materials Science, Post Deposition Annealing, Aluminium Nitride +9

Controlling interfacial reactions between HfO2 and Si using ultrathin Al2O3 diffusion barrier layer

Rajesh Katamreddy, Ronald Inman, Gregory Jursich et al. · Applied Physics Letters · 2006 · 27 citations

Materials Science, Interfacial Reactions, Engineering +13