Ronald Inman

ALD and Characterization of Aluminum Oxide Deposited on Si(100) using Tris(diethylamino) Aluminum and Water Vapor

Rajesh Katamreddy, Ronald Inman, Gregory Jursich et al. · Journal of The Electrochemical Society · 2006 · 62 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor

Anand Deshpande, Ronald Inman, Gregory Jursich et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2004 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +17

Annealing behavior of atomic layer deposited hafnium oxide on silicon: Changes at the interface

Anand Deshpande, Ronald Inman, Gregory Jursich et al. · Journal of Applied Physics · 2006 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +17

Post deposition annealing of aluminum oxide deposited by atomic layer deposition using tris(diethylamino)aluminum and water vapor on Si(100)

Rajesh Katamreddy, Ronald Inman, Gregory Jursich et al. · Thin Solid Films · 2007 · 34 citations

Natural Sciences, Materials Engineering, Materials Science +15

Characterization of hafnium oxide grown on silicon by atomic layer deposition: Interface structure

Anand S. Deshpande, Ronald Inman, Gregory Jursich et al. · Microelectronic Engineering · 2006 · 33 citations

Engineering, Materials Engineering, Materials Science +14