Young-Ha Kwon

Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn-O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials

Dong-Hee Lee, Young-Ha Kwon, Nak‐Jin Seong et al. · ACS Applied Electronic Materials · 2022 · 32 citations

Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers

Hyun-Min Ahn, Young-Ha Kwon, Nak‐Jin Seong et al. · Electronic Materials Letters · 2022 · 28 citations

Materials Science, Semiconductor Technology, Electrical Engineering +14

Performance Enhancement of Self-Aligned Coplanar TFTs With ALD-IGZO Channels via Effective Doping From Interlayer Dielectric

Seo-Hyun Moon, Young-Ha Kwon, Nak‐Jin Seong et al. · IEEE Electron Device Letters · 2023 · 24 citations

Doping Technique, Engineering, Thin Film Process Technology +18

Combination of InZnO/InGaZnO Bi-layered channels prepared by atomic layer deposition and ozone-based gate-stack formation for guaranteeing high field-effect mobility and long-term stability of thin film transistors

Seo-Hyun Moon, Soohyun Bae, Young-Ha Kwon et al. · Ceramics International · 2022 · 19 citations

Materials Science, Electrical Engineering, Engineering +9

Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O

Hyun-Min Ahn, Seo-Hyun Moon, Young-Ha Kwon et al. · IEEE Electron Device Letters · 2022 · 16 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12