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Combination of InZnO/InGaZnO Bi-layered channels prepared by atomic layer deposition and ozone-based gate-stack formation for guaranteeing high field-effect mobility and long-term stability of thin film transistors

Materials ScienceElectrical EngineeringEngineeringNanoelectronicsOxide ElectronicsApplied PhysicsInzno/ingazno Bi-layered ChannelsOzone-based Gate-stack FormationMolecular Beam EpitaxyCompound SemiconductorAtomic Layer DepositionSemiconductor Device