Bin Lu

First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga₂O₃

Yueyang Ma, Linpeng Dong, Penghui Li et al. · ACS Applied Materials & Interfaces · 2022 · 31 citations

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

Bin Lu, Hongliang Lü, Yuming Zhang et al. · IEEE Transactions on Electron Devices · 2017 · 29 citations

Device Modeling, Electrical Engineering, Gate Capacitance +15

Characteristics of InAs/GaSb Line-Tunneling FETs With Buried Drain Technique

Bin Lu, Yan Cui, Aixin Guo et al. · IEEE Transactions on Electron Devices · 2021 · 25 citations

Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition

Bin Lu, Hongliang Lv, Yuming Zhang et al. · Superlattices and Microstructures · 2016 · 21 citations

Materials Science, Materials Engineering, Electrical Engineering +9

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Zhijun Lyu, Hongliang Lv, Yuming Zhang et al. · IEEE Transactions on Electron Devices · 2021 · 19 citations

Electrical Engineering, Engineering, Inas/gasb Hftfet +11