First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga₂O₃

Abstract

The electronic properties of monolayer (ML) Ga₂O₃ and transport properties of ML Ga₂O₃-based n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated by first-principles calculations under the framework of density functional theory (DFT) coupled with the nonequilibrium Green's function (NEGF) formalism. The results show that ML Ga₂O₃ has a quasi-direct band gap of 4.92 eV, and the <i>x</i>- and <i>y</i>-directed electron mobilities are 1210 and 816 cm² V^-1 s^-1 at 300 K, respectively, under the full consideration of phonon scattering. The electron-phonon scattering mechanism shows a temperature-dependent behavior, with the acoustic modes dominating below 300 K and optical modes dominating above 300 K. At a gate length of <i>L</i>_g = 5 nm, the on-current of ML Ga₂O₃ n-MOSFET for high-performance (HP) application is 2890 μA/μm, which is more than those of the most reported two-dimensional (2D) materials. The delay time as well as the power delay product of ML Ga₂O₃ MOSFETs can meet the demands of the latest International Technology Roadmap for Semiconductors (ITRS) for HP and low-power (LP) applications until <i>L</i>_g is less than 4 and 5 nm, respectively. Through underlap structure and doping optimization strategies, ML Ga₂O₃ n-MOSFET can further fulfill the ITRS requirements for 1 nm. At last, we compare the performance of the 32-bit arithmetic logic unit (ALU) built on ML Ga₂O₃ MOSFETs with the recently reported beyond-CMOS devices. Our results indicate that ML Ga₂O₃ can serve as a promising channel material in the post-silicon era.