Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN

G. Vanko, T. Lalinský, Ž. Mozolová, +6

Vacuum

Aluminium NitrideElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride +3

Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

D. Gregušová, M. Jurkovič, Š. Haščı́k, +10

Applied Physics Letters

Aluminium NitrideWide-bandgap SemiconductorElectrical EngineeringOvergrown Al2o3Engineering +11

Spray deposited Tl-Ba-Ca-Cu-O films and bulks subjected to a common anneal

M. Jergel, F. Hanic, G. Plesch, +4

Superconductor Science and Technology

Materials ScienceMaterials EngineeringHigh-tc SuperconductivityEngineeringMaterial Analysis +13

Structural Evolution of Sputtered Indium Oxide Thin Films

I. Hotový, Thomas Kups, Jozef Liday, +6

Journal of Electrical Engineering

Materials ScienceMaterials EngineeringElectrical EngineeringOxygen ConcentrationEngineering +10

Properties of amorphous silicon carbide films prepared by PECVD

J. Huran, L. Hrubčín, A.P. Kobzev, +1

Vacuum

Materials ScienceMaterials EngineeringEngineeringApplied PhysicsThin Films +3

High <i>T</i> <i>c</i> Y-Ba-Cu-O thin films prepared by <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> low-temperature codeposition of Y, BaF2, and Cu on α-Al2O3 substrates

Š. Chromík, F. Hanic, Roman Adam, +3

Applied Physics Letters

Materials ScienceMaterials Engineeringα-Al2o3 SubstratesMaterial AnalysisEngineering +11

Significant increasing of onset temperature of FM transition in LSMO thin films

Š. Chromík, Edmund Dobročka, Agata Dujavová, +3

Applied Surface Science

Materials ScienceFm TransitionEngineeringOnset TemperatureLsmo Thin Films +5

Investigation of NiO x -based contacts on p-GaN

Jozef Liday, I. Hotový, H. Sitter, +9

Journal of Materials Science Materials in Electronics

Electrical EngineeringNio XEngineeringApplied PhysicsGan Power Device +1

Low resistance ohmic contacts annealed at 600 °C on a InAlN/GaN heterostructure with SiCl₄‐reactive ion etching surface treatment

G. Pozzovivo, J. Kuzmı́k, C. Giesen, +4

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Materials ScienceSemiconductor TechnologyElectrical EngineeringInaln/gan HeterostructureEngineering +8

Quantitative Auger electron spectroscopy of SiC

R. Kosiba, Jozef Liday, G. Ecke, +3

Vacuum

Atomic Emission SpectroscopyElectron SpectroscopySpectroscopyApplied PhysicsCarbide