Ch. Maierhofer

The growth of cubic CdS on InP(110) studied <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> by Raman spectroscopy

Dietrich R. T. Zahn, Ch. Maierhofer, Andreas Winter et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 46 citations

Optical Materials, Engineering, Crystal Growth Technology +20

Valence band offset in ZnS layers on Si(111) grown by molecular beam epitaxy

Ch. Maierhofer, Sunil Jayant Kulkarni, M. Alonso et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 22 citations

Engineering, Optoelectronic Devices, Chemistry +18

In situ monitoring of heterostructure growth by optical spectroscopies: CdS on InP(110)

Dietrich R. T. Zahn, Ch. Maierhofer, Andreas Winter et al. · Applied Surface Science · 1992 · 22 citations

Materials Science, Heterostructure Growth, Ii-vi Semiconductor +11

Growth kinetics, impurity incorporation, defect generation, and interface quality of molecular-beam epitaxy grown AlGaAs/GaAs quantum wells: Role of group III and group V fluxes

S. Munnix, R. K. Bauer, D. Bimberg et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 19 citations

Wide-bandgap Semiconductor, Overall Growth Rate, Optical Materials +17

Test of band offset commutativity by photoemission from an <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> grown ZnTe/CdS/ZnTe quantum well

W. Wilke, Ch. Maierhofer, K. Horn · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 13 citations · Full text

Categoryquantum Electronics, Engineering, Optoelectronic Devices +18