Steven Shih

Investigation on Cu TSV-Induced KOZ in Silicon Chips: Simulations and Experiments

Pu-Shan Huang, Chenyu Huang, Hsiu Jao et al. · IEEE Transactions on Electron Devices · 2013 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of gate-induced drain leakage on retention time distribution of 256 Mbit DRAM with negative wordline bias

Minchen Chang, Jengping Lin, Steven Shih et al. · IEEE Transactions on Electron Devices · 2003 · 38 citations

Engineering, Computer Engineering, Electrical Engineering +17

Si–H Bond Breaking Induced Retention Degradation During Packaging Process of 256 Mbit DRAMs With Negative Wordline Bias

Mi Chang, J. Lin, Chao‐Sung Lai et al. · IEEE Transactions on Electron Devices · 2005 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

An investigation into warpages, stresses and keep-out zone in 3D through-silicon-via DRAM packages

Μ. Y. Tsai, P. S. Huang, Chen‐Yu Huang et al. · Microelectronics Reliability · 2014 · 15 citations

Engineering, Computer Engineering, Computer Systems +14

Frontline treatment of elderly non transplant‐eligible multiple myeloma patients using CyBorD with or without thalidomide‐based consolidation: a retrospective multi‐centre analysis of real‐world data

Henry Chan, Kern Chai, Steven Shih et al. · British Journal of Haematology · 2019 · 15 citations · Full text

Medicine, Oncology, Pharmacotherapy +13