David Wei Zhang

The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

Luhao Wang, Wen Qiang Yang, Qingqing Sun et al. · Applied Physics Letters · 2012 · 114 citations

Natural Sciences, Materials Engineering, Materials Science +16

Al2O3/HfO2 functional stack films based resistive switching memories with controlled SET and RESET voltages

Lin Chen, Yawei Dai, Qingqing Sun et al. · Solid State Ionics · 2014 · 29 citations

Engineering, Materials Engineering, Materials Science +16

Cu adhesion on tantalum and ruthenium surface: Density functional theory study

Shao-Feng Ding, Shaoren Deng, Hai‐Sheng Lu et al. · Journal of Applied Physics · 2010 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +17

Calculated phase diagrams for activated low pressure diamond growth from C–H, C–O, and C–H–O systems

Ji‐Tao Wang, Yong-Zhong Wan, David Wei Zhang et al. · Journal of materials research/Pratt's guide to venture capital sources · 1997 · 22 citations

Natural Sciences, Materials Engineering, Materials Science +12

Thermodynamic coupling effect and catalyst effect for the artificial diamond growth

Ji‐Tao Wang, Zhongqiang Huang, Yong-Zhong Wan et al. · Journal of materials research/Pratt's guide to venture capital sources · 1997 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +9