The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

Abstract

Oxygen migration is reported as key factors of resistive switching in graphene oxide (GO) based memories by different groups. A flexible nonvolatile resistive switching memory based on GO was fabricated through a spin-coating process. The speed of the SET and RESET operations of the GO memories was found to be significant asymmetric. The RESET speed is in the order of 100 ns under a −5 V voltage while the SET speed is three orders of magnitude slower (100 μs) under a 5 V bias. The behavior of resistive switching speed difference is elucidated by voltage modulated oxygen diffusion barrier change.