Noritaka Ishihara - Concepedia

Author

Noritaka Ishihara

Semiconductor Energy Laboratory (Japan)

Also Known As

N. ISHIHARA, N. Ishihara, Noritaka Ishihara

Publications

244

Citations

H-Index

Concepts

All Affiliations

Semiconductor Energy Laboratory (Japan)

About

Noritaka Ishihara is an author at Semiconductor Energy Laboratory (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	210
2	Applied Physics	8	8	210
3	Chemistry	4	4	153
4	Electrical Engineering	3	3	38
5	Materials Engineering	1	1	57

Noritaka Ishihara

Publications

210

Citations

H-Index

Page 1

	Year	Citations
Origin of major donor states in In–Ga–Zn oxide Motoki Nakashima, Masashi Oota, Noritaka Ishihara, Journal of Applied Physics Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringOxide Electronics	2014	57
16.1: Negative‐Bias Photodegradation Mechanism in InGaZnO TFT Masashi Tsubuku, Ryosuke Watanabe, Noritaka Ishihara, SID Symposium Digest of Technical Papers Materials ScienceSio 2Defect LevelsOptical MaterialsEngineering	2013	57
Correlation between crystallinity and oxygen vacancy formation in In–Ga–Zn oxide Tomoki Hiramatsu, Motoki Nakashima, Erumu Kikuchi, Japanese Journal of Applied Physics Crystal IgzoEngineeringOxygen Vacancy FormationSolid-state ChemistryVacuum Device	2016	29
Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions K. Tsutsui, Daisuke Matsubayashi, Noritaka Ishihara, Applied Physics Letters Materials ScienceIi-vi SemiconductorEngineeringPhysicsOxide Electronics	2015	19
Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals Yusuke Nonaka, Yoichi Kurosawa, Yoshihiro Komatsu, Journal of Applied Physics Materials ScienceSpintronicsSemiconductorsElectrical EngineeringOxygen Vacancy	2014	13
Low turn-on voltage due to conduction band lowering effect in crystalline indium gallium zinc oxide transistors Daisuke Matsubayashi, Yoshiyuki Kobayashi, Shinpei Matsuda, Japanese Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesConduction Band	2014	13
33.1: Channel‐Etched C‐Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring Kengo Akimoto, Yukinori Shima, Masami Jincho, SID Symposium Digest of Technical Papers Materials ScienceSemiconductor TechnologyElectrical EngineeringCu WiringEngineering	2014	12
Fabrication of lanthanide decatungstate [LnIII/IV(W5O18)2]8−/9− (Ln=CeIV/III, EuIII, and ErIII) thin films using spin-coating from aqueous solutions Yusuke Fujita, Noritaka Ishihara, Keisuke Fukaya, Journal of Alloys and Compounds Materials ScienceEngineeringApplied PhysicsSolid-state ChemistryThin Film Process Technology	2012	10

Page 1