M. A. Bobrov

High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance

S. A. Blokhin, A. V. Babichev, A. G. Gladyshev et al. · IEEE Journal of Quantum Electronics · 2022 · 29 citations

Semiconductors, Photonics, Electrical Engineering +12

Reliability performance of 25 Gbit s⁻¹ 850 nm vertical-cavity surface-emitting lasers

L. Ya. Karachinsky, S. A. Blokhin, I. I. Novikov et al. · Semiconductor Science and Technology · 2013 · 23 citations

Engineering, Laser Science, Laser Applications +16

Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems

A. V. Babichev, S. A. Blokhin, A. G. Gladyshev et al. · IEEE Photonics Technology Letters · 2023 · 22 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers

S. A. Blokhin, M. A. Bobrov, N. A. Maleev et al. · Technical Physics Letters · 2020 · 20 citations

High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

S. A. Blokhin, N. A. Maleev, M. A. Bobrov et al. · Technical Physics Letters · 2018 · 19 citations