B.J. Machesney

A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's

Nicky Lu, P.E. Cottrell, Winston J. Craig et al. · IEEE Journal of Solid-State Circuits · 1986 · 55 citations

Engineering, Computer Engineering, Electrical Engineering +17

The SPT cell—A new substrate-plate trench cell for DRAMs

Nicky Lu, P.E. Cottrell, Winston J. Craig et al. · 1985 · 20 citations

Natural Sciences, Materials Science, Electronic Materials +2

Evidence of Co/SiO₂ reaction during rapid thermal annealing

Herbert L. Ho, Tue Nguyen, Julius C. Chang et al. · Journal of materials research/Pratt's guide to venture capital sources · 1993 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +9

A buried-trench DRAM cell using a self-aligned epitaxy over trench technology

Nicky Lu, T.V. Rajeevakumar, G. Bronner et al. · 2003 · 12 citations

Engineering, Computer Engineering, Electrical Engineering +14