J. Pusl - Concepedia

Author

J. Pusl

HRL Laboratories (United States)

Also Known As

J. A. Pusl, J. Pusl, J.A. Pusl, Joe Pusl

Publications

531

Citations

H-Index

Concepts

All Affiliations

HRL Laboratories (United States)Jensen Hughes (United States)University of California, Santa Barbara Rockwell Automation (United States)Shimadzu (Japan)

About

J. Pusl is an author at HRL Laboratories (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	422
2	Electrical Engineering	8	8	422
3	Education	2	2	71
4	Applied Physics	2	2	305
5	Computer Engineering	1	1	33

J. Pusl

Publications

504

Citations

H-Index

Page 1

	Year	Citations
Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics M.J.W. Rodwell, Scott T. Allen, R. Yu, Proceedings of the IEEE Soliton PropagationEngineeringNonlinear OpticsOptical Transmission SystemOptoelectronic Devices	1994	267
Short-channel Al <sub>0.5</sub> Ga <sub>0.5</sub> N/GaNMODFETs withpower density > 3 W/mm at 18 GHz Yifeng Wu, B.P. Keller, P. Fini, Electronics Letters	1997	82
Millimeter-wave on-wafer waveform and network measurements using active probes R. Yu, M. Reddy, J. Pusl, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringMillimeter Wave TechnologyEngineeringActive ProbesRf Semiconductor	1995	38
A time-domain millimeter-wave vector network analyzer R. Yu, J. Pusl, Yoshiyuki Konishi, IEEE Microwave and Guided Wave Letters EngineeringMicrowave TransmissionNetwork AnalysisEducationIntegrated Circuits	1992	33
High-efficiency GaAs-based pHEMT C-band power amplifier J.J. Brown, J. Pusl, Ming Hu, IEEE Microwave and Guided Wave Letters Mm PhemtElectrical EngineeringEngineeringRf SemiconductorPower Device	1996	26
Capacitive-division traveling-wave amplifier with 340 GHz gain/bandwidth product J. Pusl, B. Agarwal, R. Pullela, Capacitive-division Traveling-wave AmplifiersElectrical EngineeringMidband GainsDb GainEngineering	2002	24
High-efficiency L and S-band power amplifiers with high-breakdown GaAs-based pHEMTs J. Pusl, R.D. Widman, J.J. Brown, Mm PhemtElectrical EngineeringPhemt DevicesHigh-efficiency LEngineering	2002	14
High-efficiency GaAs-based pHEMT power amplifier technology for 1-18 GHz J. Pusl, J.J. Brown, J.B. Shealy, Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	2002	10
K-band and high-power/efficiency/breakdown GaInAs/InP composite channel HEMTs J.B. Shealy, M. Matloubian, T. Liu, IEEE Microwave and Guided Wave Letters Wide-bandgap SemiconductorGa/sub 0.47/In/subElectrical EngineeringEngineeringRf Semiconductor	1997	10

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