Jeong-Sik Lee

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Kenichi Nishi, Hideaki Saito, S. Sugou et al. · Applied Physics Letters · 1999 · 589 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Firm age and innovation

Natarajan Balasubramanian, Jeong-Sik Lee · Industrial and Corporate Change · 2008 · 291 citations

Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field

I. V. Ignatĭev, I. É. Kozin, V. Davydov et al. · Physical review. B, Condensed matter · 2001 · 41 citations

Categoryquantum Electronics, Engineering, Optoelectronic Devices +20

Project selection in NIH: A natural experiment from ARRA

Hyunwoo Park, Jeong-Sik Lee, Byung‐Cheol Kim · Research Policy · 2015 · 39 citations

Engineering, Project Scheduling, Project Management +5

Role of AlN/GaN Multilayer in Crack-Free GaN Layer Growth on 5”φ Si (111) Substrate

Tomoya Sugahara, Jeong-Sik Lee, Kohji Ohtsuka · Japanese Journal of Applied Physics · 2004 · 35 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16