Concepedia

S. I. Romanov

SI

5

Publications

85

Citations

5

H-Index

1976

Active since

Affiliations

Institute of Semiconductor Physics(Current)

S. I. Romanov is an author at Institute of Semiconductor Physics specializing in materials science, applied physics, and engineering.

Top concepts

EngineeringApplied PhysicsMaterial ScienceThin FilmsSurface ScienceCrystalline DefectsPhysicsNanoelectronicsMicroelectronicsMaterials Engineering

Publications per year

1976–2002

5

Publications

5

GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant substrates based on porous silicon

S. I. Romanov, V. I. Mashanov, O. P. Pchelyakov · Applied Physics Letters · 1999 · 27 citations

Materials Science, Materials Engineering, Gesi Films +14

Voids in ion-implanted silicon

S. I. Romanov, L. S. Smirnov · Radiation Effects · 1978 · 18 citations

Materials Science, Ion Implantation, Engineering +13

Specific behaviour of stress relaxation in Ge<sub><i>x</i></sub>Si<sub>1 <i>x</i></sub>films grown on porous silicon based mesa substrates: computer calculations

P. L. Novikov, Yu. B. Bolkhovityanov, O. P. Pchelyakov et al. · Semiconductor Science and Technology · 2002 · 14 citations

Engineering, Thin Film Process Technology, Silicon On Insulator +18

A secondary ion mass spectrometry study of p<sup>+</sup>porous silicon

A. A. Karanovich, S. I. Romanov, V. V. Kirienko et al. · Journal of Physics D Applied Physics · 1995 · 13 citations

Materials Science, Electrical Engineering, Ion Implantation +15

High dose effects in ion implantation

A. V. Dvurechensky, S. I. Romanov, L. S. Smirnov · Radiation Effects · 1976 · 13 citations

Engineering, Radiation Exposure, Oriented Crystallization +18

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