A. Hanser

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

S.A. Smith, Colin A. Wolden, M. D. Bremser et al. · Applied Physics Letters · 1997 · 174 citations

Aluminium Nitride, Selective Etching, Engineering +16

The odd-even staggering of the nuclear charge radii of Pb isotopes

M. Anselment, W. Faubel, S. Göring et al. · Nuclear Physics A · 1986 · 149 citations

High-energy Nuclear Reaction, Nuclear Physics, Physics +8

Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier

Yi Zhou, Dake Wang, Claude Ahyi et al. · Journal of Applied Physics · 2007 · 95 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +11

High-resolution measurements of isotope shifts and hyperfine structure in stable and radioactive lead isotopes

R. C. Thompson, M. Anselment, K. Bekk et al. · Journal of Physics G Nuclear Physics · 1983 · 94 citations

Isotope Analysis, Nuclear Physics, Physics +15

High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

T. Paskova, R. Kroeger, S. Figge et al. · Applied Physics Letters · 2006 · 82 citations

Materials Engineering, Materials Science, Gan Boules +14