Journal of Applied Physics · 2007 · 95 citations · 27 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationIii-v SemiconductorsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBarrier HeightsBreakdown VoltageCapacitance-voltage CharacterizationCurrent-voltage CharacterizationGallium NitrideJunction Ideality FactorNegative Temperature CoefficientSeries Resistance
The temperature-dependent electrical characteristics of Schottky rectifiers fabricated with a SiO2 field plate on a freestanding n− gallium nitride (GaN) substrate were reported in the temperature range of 298–473K. The Schottky barrier heights evaluated from forward current-voltage measurement revealed an increase of Schottky barrier height and series resistance but a decrease of ideality factor (n) with increasing temperature. However, the Schottky barrier heights evaluated from capacitance-voltage measurement remained almost the same throughout the temperature range measured. The Richardson constant extrapolated from ln(J0∕T2) vs 1∕T plot was found to be 0.029Acm−2K−2. A modified Richardson plot with ln(J0∕T2) vs 1∕nT showed better linearity, and the corresponding effective Richardson constant was 35Acm−2K−2. The device showed a high reverse breakdown voltage of 560V at room temperature. The negative temperature coefficients were found for reverse breakdown voltage, which is indicative of a defect-assisted breakdown.
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High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
Lei Wang, M. I. Nathan, T-H. Lim et al. · Applied Physics Letters · 1996 · 258 citations