B. L. Williams is an author at Stanford University specializing in electrical engineering, engineering, and applied physics.
Top concepts
EngineeringElectrical EngineeringApplied PhysicsMaterial ScienceCorrosionMicrostructureDevice ModelingMicroelectronics
Publications per year
1996–1998
5
5
Modeling ion implantation of HgCdTe
H. G. Robinson, Danfeng Mao, B. L. Williams et al. · Journal of Electronic Materials · 1996 · 14 citations
X-ray rocking curve analysis of ion implanted mercury cadmium telluride
B. L. Williams, H. G. Robinson, C. R. Helms et al. · Journal of Electronic Materials · 1997 · 10 citations
Rows per page
1–5 of 5