H. G. Robinson

Modeling uphill diffusion of Mg implants in GaAs using <scp>suprem</scp>-<scp>i</scp> <scp>v</scp>

H. G. Robinson, Michael Deal, G.A.J. Amaratunga et al. · Journal of Applied Physics · 1992 · 40 citations

Device Modeling, Materials Engineering, Semiconductors +15

Diffusion of implanted beryllium in <i>n</i>- and <i>p</i>-type GaAs

Michael Deal, H. G. Robinson · Applied Physics Letters · 1989 · 37 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Damage-induced uphill diffusion of implanted Mg and Be in GaAs

H. G. Robinson, Michael Deal, D. A. Stevenson · Applied Physics Letters · 1990 · 29 citations · Full text

Engineering, Be Implants, Ion Implantation +16

Derivation of an analytical model to calculate junction depth in HgCdTe photodiodes

S. Holander-Gleixner, H. G. Robinson, C. R. Helms · Journal of Applied Physics · 1998 · 23 citations

Wide-bandgap Semiconductor, Engineering, Junction Formation +18

Extended defects of ion-implanted GaAs

K. S. Jones, Emily Allen, H. G. Robinson et al. · Journal of Applied Physics · 1991 · 22 citations

Semiconductors, Materials Science, Electrical Engineering +14