B. S. Sywe

X-ray double crystal characterization of single crystal epitaxial aluminum nitride thin films on sapphire, silicon carbide and silicon substrates

J. Chaudhuri, R. Thokala, James H. Edgar et al. · Journal of Applied Physics · 1995 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +17

A comparison of NF3 and NH3 as the nitrogen sources for AIN crystal growth by metalorganic chemical vapor deposition

James H. Edgar, Zhongliang Yu, B. S. Sywe · Thin Solid Films · 1991 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +6

UV-Visible-IR Electroluminescence from Si and Ge Nanocrystals in a Wider Bandgap Matrix

Gary S. Tompa, David C. Morton, B. S. Sywe et al. · MRS Proceedings · 1994 · 19 citations

Engineering, Materials Engineering, Materials Science +16

The growth and characterization of GaN on sapphire and silicon

Zhongliang Yu, B. S. Sywe, Akhter Ahmed et al. · Journal of Electronic Materials · 1992 · 15 citations

Engineering, Materials Engineering, Materials Science +10

Fourier transform infrared spectroscopic study of predeposition reactions in metalloorganic chemical vapor deposition of gallium nitride. 2

B. S. Sywe, John R. Schlup, James H. Edgar · Chemistry of Materials · 1991 · 15 citations

Natural Sciences, Chemistry, Materials Science +13