Shuman Mao - Concepedia

Author

Shuman Mao

University of Electronic Science and Technology of China ORCID

Also Known As

Shuman Mao

Publications

208

Citations

H-Index

Concepts

All Affiliations

University of Electronic Science and Technology of China Huzhou University Yibin University

About

Shuman Mao is an author at University of Electronic Science and Technology of China specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	97
2	Electrical Engineering	7	7	97
3	Applied Physics	6	6	71
4	Microelectronics	5	5	70
5	Electronic Devices	1	1	17

Shuman Mao

Publications

133

Citations

H-Index

Page 1

	Year	Citations
A Yield-Improvement Method for Millimeter-Wave GaN MMIC Power Amplifier Design Based on Load—Pull Analysis Shuman Mao, Wei Zhang, Yuan Yao, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorHigh-frequency Device	2021	26
Bendable Microwave AlGaN/GaN High-Electron-Mobility Transistor With Output Power Density of 2.65 W/mm Yan Wang, Qingzhi Wu, Shuman Mao, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringOutput Power Density	2021	17
Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs Shuman Mao, Yuehang Xu Micromachines	2018	15
An Improved Noise Modeling Method Using a Quasi-Physical Zone Division Model for AlGaN/GaN HEMTs Shuman Mao, Ruimin Xu, Bo Yan, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringRf SemiconductorNoise Performance	2023	12
Negative constant voltage stress-induced threshold voltage instability in hydrogen-terminated diamond MOSFETs with low-temperature deposited Al2O3 Zhihao Chen, Xinxin Yu, Jianjun Zhou, Applied Physics Letters SemiconductorsWeak Gate NcvsElectrical EngineeringSemiconductor TechnologyEngineering	2020	11
Characterization of Substrate-Trap Effects in Hydrogen-Terminated Diamond Metal–Oxide–Semiconductor Field-Effect Transistors Zhihao Chen, Xinxin Yu, Jianjun Zhou, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringEngineeringElectronic EngineeringTrap Effects	2021	11
A Broadband 20W GaN High Power Amplifier for Ku-band satellite communication Yujie Liu, Zhilong Xiao, Shiquan Zhu, 2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)	2022	11
High Frequency Noise Model of AlGaN/GaN HEMTs Shuman Mao, Yuehang Xu, Yongbo Chen, ECS Journal of Solid State Science and Technology Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorApplied Physics	2017	10
An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band Junfeng Li, Shuman Mao, Yuehang Xu, Micromachines Electrical EngineeringEngineeringRf SemiconductorBarrier LoweringW Band	2018	10
A Quasi-Physical Large-Signal Statistical Model for 0.15 μm AlGaN/GaN HEMTs Process Zhang Wen, Shuman Mao, Yunqiu Wu,	2019	10

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